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Power Electronics

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    Nvidia adds LG Electronics as preferred AI cooling provider●Nvidia is tackling its massive AI power bottleneck by bringing LG Electronics into its Partner Network as a preferred coMmastodonTechnologyAI410 h ago

    Nvidia has brought LG Electronics into its Partner Network as a preferred cooling provider, aiming to ease the power and heat bottleneck facing large-scale AI data centers. The move highlights that thermal management, not just GPU supply, is becoming a decisive factor in AI infrastructure, giving LG a direct route to supply cooling technology for Nvidia systems.

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    GlobalFoundries ships first Navitas GaN wafers from Vermont●GLOBALFOUNDRIES READIES A GLOBAL GAN EXPANSION AS ITS VERMONT LINE SHIPS FIRST NAVITAS WAFERS 10 MONTHS AFTER THE TSMC L𝕏xSGTechnologySemiconductors610 h ago

    GlobalFoundries has shipped its first gallium nitride wafers for Navitas Semiconductor from its Vermont fab, roughly ten months after taking a license arrangement linked to TSMC. The company is now preparing a broader global expansion of GaN power chip capacity. The move highlights growing demand for GaN technology in power electronics and positions GlobalFoundries as an alternative supplier as Navitas diversifies its manufacturing base.

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    Navitas to develop 10kV silicon carbide chips for US government▼Navitas to develop 10kV SiC chips for US Government✉newsTechnologySemiconductors45 min ago

    Navitas Semiconductor is set to develop 10kV silicon carbide (SiC) power chips for the US government, according to a report by Compound Semiconductor. The high-voltage chips would serve applications requiring robust power conversion, such as grid infrastructure and defense systems. The announcement underscores growing US investment in domestic semiconductor capabilities, particularly in wide-bandgap materials like silicon carbide, which offer higher efficiency and voltage tolerance than traditional silicon chips.

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    Samsung puts hybrid bonding at core of DRAM roadmap●Samsung Electronics is reshaping its next-generation dynamic random-access memory roadmap, elevating its B1b wafer-to-waMmastodonTechnologySemiconductors04 h ago

    Samsung Electronics is reshaping its next-generation DRAM roadmap by elevating B1b wafer-to-wafer hybrid bonding to become the core technology behind its D0a node, according to DigiTimes Asia. The move signals Samsung's effort to stay competitive in advanced memory as the industry pushes toward denser, more power-efficient DRAM for AI and data-center demand.