Mmastodon TechnologySemiconductors first seen 4 h ago, last 3 h ago, peak #5
Samsung puts hybrid bonding at core of DRAM roadmap
Original: Samsung Electronics is reshaping its next-generation dynamic random-access memory roadmap, elevating its B1b wafer-to-wa
Samsung Electronics is reshaping its next-generation DRAM roadmap by elevating B1b wafer-to-wafer hybrid bonding to become the core technology behind its D0a node, according to DigiTimes Asia. The move signals Samsung's effort to stay competitive in advanced memory as the industry pushes toward denser, more power-efficient DRAM for AI and data-center demand.
Why now: Samsung's technology pivot in advanced DRAM matters for the competitive memory market amid AI-driven chip demand.
Samsung ElectronicsDigiTimes Asia
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