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CXMT clashes with Micron over 4F² DRAM scaling claims

Original: Chinese memory maker CXMT has answered Micron's claim that its 4F² DRAM layout brings no density gain. CXMT says its six

Chinese memory maker CXMT has pushed back against Micron's assertion that the 4F² DRAM cell layout offers no real density gain. CXMT says its sixth-generation DRAM platform is built on 4F², has passed engineering-sample verification, and will ship samples by the end of the year. The dispute highlights intensifying competition between Chinese and US memory chipmakers, with CXMT challenging Micron's technical judgment on next-generation DRAM scaling at a sensitive moment for the global semiconductor supply chain.

Why now: The technical dispute underscores the escalating US-China rivalry in advanced memory chips.

CXMTMicronDRAM

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