Mmastodon TechnologySemiconductors first seen 1 d ago, last 5 h ago, peak #1
CXMT disputes Micron over 4F² DRAM scaling claims
Original: Chinese memory maker CXMT has answered Micron's claim that its 4F² DRAM layout brings no density gain. CXMT says its six
Chinese memory maker CXMT has publicly pushed back on Micron's assertion that the 4F² DRAM cell layout offers no real density gain. CXMT says its sixth-generation DRAM platform is built on 4F², has passed engineering-sample verification, and will ship samples by the end of the year. The exchange sets up a direct technical dispute between the two memory makers at a time when DRAM supply and China's chip ambitions are under close scrutiny.
Why now: A rare public technical disagreement between a Chinese and an American memory giant touches on DRAM roadmaps and China's semiconductor push.
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